師資人員	首頁師資人員專任教師

李天錫 教授　 Lee, Tien-Hsi 辦公室： (Office) E4-363 專線電話： (Tel) 03-4267302 校內分機： (Campus Extension) 34302 傳真電話: (Fax) 03-4254501 E-mail： benlee@ncu.edu.tw

論文著作 (Publications)

題目 作者姓名 期刊名稱 出版 年份 期別及 起訖頁數 期別種類 Communication--Effect of Free-Carrier Absorption on an Anodized Silicon Surface for Producing Dense and Uniform Nanocrystals Benjamin T.-H. Lee* and C.-C. Chiang Journal of the Electrochemical Society 2018 165 (3), H99-H101 SCI Free-Carrier Absorption Assisted Photoelectrochemistry of Silicon Benjamin T.-H. Lee*, C.-C. Chiang and Yean-Ren Hwang ECS Transactions 2017 80 (10) 1113-1125 EI Measurement of Thickness of High-Resistivity Substrate By Photoconduction Enhanced Capacitance Displacement Sensor Benjamin T. -H. Lee* and M. -C. Lin ECS Transactions 2017 77 (11), 1747-1752 EI Nanoscale Layer Transfer by Hydrogen Ion-Cut Processing: A Brief Review Through Recent U.S. Patents Benjamin T.-H. Lee* Recent Patents on Nanotechnology 2017 11(1), 42-49 SCI Eliminating Thickness Measurement Uncertainty of Capacitive Displacement Sensor in High Resistivity Substrate by Photoconduction Benjamin T.-H. Lee* and M. -C. Lin ECS Journal of Solid State Science and Technology 2017 6(5) 323-325 SCI Sharpening Si nanocrystals on the bulk surface by nanoscale electrochemistry thru controlling the hole current with the irradiation of near-infrared laser C.-C. Chiang and T. -H. Lee* JOURNAL OF THE ELECTROCHEMICAL SOCIETY 2016 163 ( 9), E258-E262 SCI Inhibition Effect of a Laser on Thickness Increase of P-type Porous Silicon in Electrochemical Anodizing C. -C. Chiang , Pi-Chun Juan, and T. -H. Lee* Journal of the Electrochemical Society 2016 163 (5) H265-H268 SCI The Suppression Effect of 830nm Laser Irradiation on Porous Silicon Formation C. -C. Chiang, Y.-C Huang, P.- C. Juan, F. -S. Lo, and T. -H. Lee* ECS Transactions 2015 69(35): 1-7 EI Modeling a thermionic energy converter using finite-difference time-domain particle-in-cell simulations F. -S. Lo, P. S. Lu, B. Ragan-Kelley, A. Minnich, T. -H. Lee, M. C. Lin, and J. P. Verboncoeur Physics of Plasma 2014 21, 023510 SCI Effect of Microwave Processing on Oxygen Plasma-Assisted Bonding Enabling Rapid Layer Transfer C. -C. Ho, F. S. Lo, S. C. Jeng, J. -H. Li, H. -H. Chang, and T. -H. Lee* ECS Solid State Letters 2014 3(1) P4-P6 SCI

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