題目 |
作者姓名 |
期刊名稱 |
出版
年份 |
期別及
起訖頁數 |
期別種類 |
Fundamental issues in wafer bonding |
U. Gosele, Y. Bluhm, G. Kastner, P. Kopperschmidt, G. Kraamputer, R. Scholz, A. Schumacher, St. Senz, Q.-Y. Tong, L.-J. Huang, Y.-L. Chao, and T. H. Lee |
J. Vac. Sci. Technol. A |
1999 |
17 (4), P1145-P1152 |
SCI |
Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting |
Q.-Y. Tong, T.-H. Lee, et. al. |
Electronics Letters |
1998 |
34(4):407 - 408 |
SCI |
A “smarter-cut” approach to low temperature silicon layer transfer |
Q.-Y. Tong, R. Scholz, U. Gosele, T.-H. Lee, L.-J. Huang, Y.-L. Chao, and T. Y. Tan |
Applied Physics Letters |
1997 |
72 (49) |
SCI |
The Role of Surface Chemistry in Bonding of Standard Silicon Wafers |
Q.-Y. Tong, T.-H. Lee, U. Gosele, M. Reiche, J. Ramm and E. Beck |
Journal of the Electrochemical Society |
1997 |
144(1) P384-P389 |
SCI |
|